4

Positive mode silylation process characterization

Year:
1992
Language:
english
File:
PDF, 325 KB
english, 1992
7

IIA-2 saturable charge FET

Year:
1987
Language:
english
File:
PDF, 163 KB
english, 1987
8

Reactive Ion Etching of GaSb, (Ai,Ga)Sb, and InAs for Novel Device Applications.

Year:
1990
Language:
english
File:
PDF, 3.76 MB
english, 1990
10

New phenomena in coupled transport between 2D and 3D electron-gas layers

Year:
1989
Language:
english
File:
PDF, 677 KB
english, 1989
11

Novel InAs/(Al,Ga)Sb FET with direct gate-to-channel contact

Year:
1991
Language:
english
File:
PDF, 285 KB
english, 1991